LSG11N65E
vs
STI14NM65N
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Contact Manufacturer
|
Obsolete
|
Ihs Manufacturer |
XIAN LONTEN RENEWABLE ENERGY TECHNOLOGY INC
|
STMICROELECTRONICS
|
Package Description |
SMALL OUTLINE, R-PSSO-G2
|
I2PAK-3
|
Reach Compliance Code |
unknown
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
210 mJ
|
300 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
650 V
|
650 V
|
Drain Current-Max (ID) |
11 A
|
12 A
|
Drain-source On Resistance-Max |
0.38 Ω
|
0.38 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-252
|
TO-262AA
|
JESD-30 Code |
R-PSSO-G2
|
R-PSIP-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
IN-LINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
30 A
|
48 A
|
Surface Mount |
YES
|
NO
|
Terminal Form |
GULL WING
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Part Package Code |
|
TO-262AA
|
Pin Count |
|
3
|
JESD-609 Code |
|
e3
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation-Max (Abs) |
|
125 W
|
Qualification Status |
|
Not Qualified
|
Terminal Finish |
|
Matte Tin (Sn)
|
|
|
|
Compare LSG11N65E with alternatives
Compare STI14NM65N with alternatives