LMSZ5262BT1G
vs
BZT55C51L1G
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
End Of Life
|
| Ihs Manufacturer |
LESHAN RADIO CO LTD
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| Dynamic Impedance-Max |
125 Ω
|
125 Ω
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
125 °C
|
175 °C
|
| Power Dissipation-Max |
0.5 W
|
0.5 W
|
| Reference Voltage-Nom |
51 V
|
51 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
ZENER
|
ZENER
|
| Terminal Finish |
Tin (Sn)
|
MATTE TIN OVER NICKEL
|
| Voltage Tol-Max |
5%
|
5%
|
| Working Test Current |
2.5 mA
|
2.5 mA
|
| Base Number Matches |
1
|
1
|
| Case Connection |
|
ISOLATED
|
| JEDEC-95 Code |
|
DO-213AA
|
| JESD-30 Code |
|
O-LELF-R2
|
| Knee Impedance-Max |
|
700 Ω
|
| Number of Terminals |
|
2
|
| Operating Temperature-Min |
|
-65 °C
|
| Package Body Material |
|
GLASS
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Polarity |
|
UNIDIRECTIONAL
|
| Reverse Current-Max |
|
0.1 µA
|
| Reverse Test Voltage |
|
38 V
|
| Terminal Form |
|
WRAP AROUND
|
| Terminal Position |
|
END
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare LMSZ5262BT1G with alternatives
Compare BZT55C51L1G with alternatives