LMBD6050LT3G
vs
1N4148UR-1
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
LESHAN RADIO CO LTD
|
MICROCHIP TECHNOLOGY INC
|
| Package Description |
R-PDSO-G3
|
MELF-2
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.70
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.7 V
|
1.2 V
|
| JESD-30 Code |
R-PDSO-G3
|
O-LELF-R2
|
| Non-rep Pk Forward Current-Max |
0.5 A
|
2 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
3
|
2
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Operating Temperature-Min |
-55 °C
|
-65 °C
|
| Output Current-Max |
0.2 A
|
0.2 A
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
235
|
| Power Dissipation-Max |
0.225 W
|
|
| Rep Pk Reverse Voltage-Max |
70 V
|
75 V
|
| Reverse Recovery Time-Max |
0.004 µs
|
0.005 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
WRAP AROUND
|
| Terminal Position |
DUAL
|
END
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
20
|
| Base Number Matches |
2
|
10
|
| Factory Lead Time |
|
22 Weeks
|
| Samacsys Manufacturer |
|
Microchip
|
| Additional Feature |
|
METALLURGICALLY BONDED
|
| Application |
|
SWITCHING
|
| Breakdown Voltage-Min |
|
100 V
|
| JEDEC-95 Code |
|
DO-213AA
|
| JESD-609 Code |
|
e0
|
| Reference Standard |
|
MIL-19500
|
| Reverse Current-Max |
|
0.5 µA
|
| Reverse Test Voltage |
|
75 V
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare LMBD6050LT3G with alternatives
Compare 1N4148UR-1 with alternatives