LM258N vs LM258AN feature comparison

LM258N Philips Semiconductors

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LM258AN Samsung Semiconductor

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Rohs Code Yes No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer PHILIPS SEMICONDUCTORS SAMSUNG SEMICONDUCTOR INC
Package Description DIP-8 DIP, DIP8,.3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.33.00.01 8542.33.00.01
Amplifier Type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Architecture VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
Bias Current-Max (IIB) @25C 0.15 µA 0.08 µA
Frequency Compensation YES YES
Input Offset Voltage-Max 7000 µV 4000 µV
JESD-30 Code R-PDIP-T8 R-PDIP-T8
Low-Offset NO NO
Number of Functions 2 2
Number of Terminals 8 8
Operating Temperature-Max 125 °C 85 °C
Operating Temperature-Min -25 °C -25 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Equivalence Code DIP8,.3 DIP8,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Packing Method TUBE
Qualification Status Not Qualified Not Qualified
Slew Rate-Nom 0.3 V/us
Supply Current-Max 1.2 mA 2 mA
Supply Voltage Limit-Max 32 V 16 V
Surface Mount NO NO
Technology BIPOLAR BIPOLAR
Temperature Grade OTHER OTHER
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Unity Gain BW-Nom 1000
Voltage Gain-Min 25000 25000
Base Number Matches 11 9
JESD-609 Code e0
Terminal Finish Tin/Lead (Sn/Pb)

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