LM258AN
vs
SE532N
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
PHILIPS SEMICONDUCTORS
|
| Package Description |
DIP, DIP8,.3
|
DIP, DIP8,.3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.33.00.01
|
8542.33.00.01
|
| Amplifier Type |
OPERATIONAL AMPLIFIER
|
OPERATIONAL AMPLIFIER
|
| Architecture |
VOLTAGE-FEEDBACK
|
VOLTAGE-FEEDBACK
|
| Bias Current-Max (IIB) @25C |
0.08 µA
|
0.15 µA
|
| Frequency Compensation |
YES
|
YES
|
| Input Offset Voltage-Max |
4000 µV
|
7000 µV
|
| JESD-30 Code |
R-PDIP-T8
|
R-PDIP-T8
|
| JESD-609 Code |
e0
|
|
| Low-Offset |
NO
|
NO
|
| Number of Functions |
2
|
2
|
| Number of Terminals |
8
|
8
|
| Operating Temperature-Max |
85 °C
|
125 °C
|
| Operating Temperature-Min |
-25 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
DIP
|
DIP
|
| Package Equivalence Code |
DIP8,.3
|
DIP8,.3
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Supply Current-Max |
2 mA
|
1.2 mA
|
| Supply Voltage Limit-Max |
16 V
|
32 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
BIPOLAR
|
BIPOLAR
|
| Temperature Grade |
OTHER
|
MILITARY
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Voltage Gain-Min |
25000
|
25000
|
| Base Number Matches |
9
|
3
|
| Packing Method |
|
TUBE
|
| Slew Rate-Nom |
|
0.3 V/us
|
| Unity Gain BW-Nom |
|
1000
|
|
|
|
Compare LM258AN with alternatives
Compare SE532N with alternatives