LM258AN vs LM358J feature comparison

LM258AN Samsung Semiconductor

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LM358J National Semiconductor Corporation

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC NATIONAL SEMICONDUCTOR CORP
Package Description DIP, DIP8,.3 DIP, DIP8,.3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.33.00.01 8542.33.00.01
Amplifier Type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Architecture VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
Bias Current-Max (IIB) @25C 0.08 µA 0.25 µA
Frequency Compensation YES YES
Input Offset Voltage-Max 4000 µV 7000 µV
JESD-30 Code R-PDIP-T8 R-GDIP-T8
JESD-609 Code e0 e0
Low-Offset NO NO
Number of Functions 2 2
Number of Terminals 8 8
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min -25 °C
Package Body Material PLASTIC/EPOXY CERAMIC, GLASS-SEALED
Package Code DIP DIP
Package Equivalence Code DIP8,.3 DIP8,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Qualification Status Not Qualified Not Qualified
Supply Current-Max 2 mA 2 mA
Supply Voltage Limit-Max 16 V 32 V
Surface Mount NO NO
Technology BIPOLAR BIPOLAR
Temperature Grade OTHER COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Voltage Gain-Min 25000 25000
Base Number Matches 9 7
Part Package Code DIP
Pin Count 8
Average Bias Current-Max (IIB) 0.25 µA
Common-mode Reject Ratio-Min 65 dB
Common-mode Reject Ratio-Nom 85 dB
Seated Height-Max 5.08 mm
Supply Voltage-Nom (Vsup) 5 V
Unity Gain BW-Nom 1000
Width 7.62 mm

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