LM258AN vs LM158AN feature comparison

LM258AN Samsung Semiconductor

Buy Now Datasheet

LM158AN Signetics

Buy Now Datasheet
Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SIGNETICS CORP
Package Description DIP, DIP8,.3 ,
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.33.00.01 8542.33.00.01
Amplifier Type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Architecture VOLTAGE-FEEDBACK
Bias Current-Max (IIB) @25C 0.08 µA
Frequency Compensation YES
Input Offset Voltage-Max 4000 µV 4000 µV
JESD-30 Code R-PDIP-T8 R-PDIP-T8
JESD-609 Code e0
Low-Offset NO
Number of Functions 2 2
Number of Terminals 8 8
Operating Temperature-Max 85 °C
Operating Temperature-Min -25 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP
Package Equivalence Code DIP8,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Qualification Status Not Qualified Not Qualified
Supply Current-Max 2 mA
Supply Voltage Limit-Max 16 V 32 V
Surface Mount NO NO
Technology BIPOLAR BIPOLAR
Temperature Grade OTHER
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm
Terminal Position DUAL DUAL
Voltage Gain-Min 25000
Base Number Matches 9 4
Average Bias Current-Max (IIB) 0.1 µA
Common-mode Reject Ratio-Nom 85 dB
Supply Voltage-Nom (Vsup) 5 V
Unity Gain BW-Nom 1000

Compare LM258AN with alternatives

Compare LM158AN with alternatives