LM258AN vs CA0258AE feature comparison

LM258AN Samsung Semiconductor

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CA0258AE Harris Semiconductor

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC HARRIS SEMICONDUCTOR
Package Description DIP, DIP8,.3 DIP-8
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.33.00.01 8542.33.00.01
Amplifier Type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Architecture VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
Bias Current-Max (IIB) @25C 0.08 µA
Frequency Compensation YES YES
Input Offset Voltage-Max 4000 µV 4000 µV
JESD-30 Code R-PDIP-T8 R-PDIP-T8
JESD-609 Code e0 e0
Low-Offset NO NO
Number of Functions 2 2
Number of Terminals 8 8
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -25 °C -25 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Equivalence Code DIP8,.3 DIP8,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Qualification Status Not Qualified Not Qualified
Supply Current-Max 2 mA 3 mA
Supply Voltage Limit-Max 16 V
Surface Mount NO NO
Technology BIPOLAR BIPOLAR
Temperature Grade OTHER OTHER
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Voltage Gain-Min 25000
Base Number Matches 9 3
Average Bias Current-Max (IIB) 0.1 µA
Common-mode Reject Ratio-Nom 85 dB
Supply Voltage-Nom (Vsup) 5 V
Unity Gain BW-Nom 1000

Compare LM258AN with alternatives

Compare CA0258AE with alternatives