LM108D vs PM308AP feature comparison

LM108D Raytheon Semiconductor

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PM308AP Precision Monolithics Inc

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer RAYTHEON SEMICONDUCTOR PRECISION MONOLITHICS INC
Package Description DIP, DIP8,.3 DIP, DIP8,.3
Reach Compliance Code unknown unknown
Amplifier Type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Architecture VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
Average Bias Current-Max (IIB) 0.003 µA 0.01 µA
Bias Current-Max (IIB) @25C 0.002 µA 0.007 µA
Common-mode Reject Ratio-Min 85 dB
Common-mode Reject Ratio-Nom 100 dB 110 dB
Frequency Compensation NO NO
Input Offset Voltage-Max 3000 µV 730 µV
JESD-30 Code R-GDIP-T8 R-PDIP-T8
JESD-609 Code e0 e0
Low-Offset NO YES
Neg Supply Voltage Limit-Max -20 V -18 V
Neg Supply Voltage-Nom (Vsup) -15 V -15 V
Number of Functions 1 1
Number of Terminals 8 8
Operating Temperature-Max 125 °C 70 °C
Operating Temperature-Min -55 °C
Package Body Material CERAMIC, GLASS-SEALED PLASTIC/EPOXY
Package Code DIP DIP
Package Equivalence Code DIP8,.3 DIP8,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Qualification Status Not Qualified Not Qualified
Supply Current-Max 0.6 mA 0.8 mA
Supply Voltage Limit-Max 20 V 18 V
Supply Voltage-Nom (Vsup) 15 V 15 V
Surface Mount NO NO
Technology BIPOLAR BIPOLAR
Temperature Grade MILITARY COMMERCIAL
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Unity Gain BW-Nom 1000
Voltage Gain-Min 25000 60000
Base Number Matches 4 1
Length 9.88 mm
Low-Bias NO
Micropower YES
Power NO
Programmable Power NO
Seated Height-Max 5.33 mm
Wideband NO
Width 7.62 mm

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