LM108AD/883B vs LM308AN8 feature comparison

LM108AD/883B Raytheon Semiconductor

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LM308AN8 Analog Devices Inc

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer RAYTHEON SEMICONDUCTOR ANALOG DEVICES INC
Package Description DIP, DIP8,.3 DIP,
Reach Compliance Code unknown compliant
Amplifier Type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Architecture VOLTAGE-FEEDBACK
Average Bias Current-Max (IIB) 0.003 µA 0.007 µA
Bias Current-Max (IIB) @25C 0.002 µA
Common-mode Reject Ratio-Min 96 dB 96 dB
Common-mode Reject Ratio-Nom 110 dB 110 dB
Frequency Compensation NO
Input Offset Voltage-Max 1000 µV 500 µV
JESD-30 Code R-GDIP-T8 R-PDIP-T8
JESD-609 Code e0 e0
Low-Offset NO
Neg Supply Voltage Limit-Max -20 V -18 V
Neg Supply Voltage-Nom (Vsup) -15 V
Number of Functions 1 1
Number of Terminals 8 8
Operating Temperature-Max 125 °C 70 °C
Operating Temperature-Min -55 °C
Package Body Material CERAMIC, GLASS-SEALED PLASTIC/EPOXY
Package Code DIP DIP
Package Equivalence Code DIP8,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Qualification Status Not Qualified Not Qualified
Screening Level 38535Q/M;38534H;883B
Supply Current-Max 0.6 mA
Supply Voltage Limit-Max 20 V 18 V
Supply Voltage-Nom (Vsup) 15 V
Surface Mount NO NO
Technology BIPOLAR BIPOLAR
Temperature Grade MILITARY COMMERCIAL
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Voltage Gain-Min 40000 80000
Base Number Matches 4 2
ECCN Code EAR99
HTS Code 8542.33.00.01
Length 9.78 mm
Seated Height-Max 4.445 mm
Slew Rate-Nom 0.1 V/us
Width 7.62 mm

Compare LM108AD/883B with alternatives

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