LH2101AD vs PM2108Q feature comparison

LH2101AD Raytheon Semiconductor

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PM2108Q Precision Monolithics Inc

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer RAYTHEON SEMICONDUCTOR PRECISION MONOLITHICS INC
Reach Compliance Code unknown unknown
Amplifier Type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Architecture VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
Average Bias Current-Max (IIB) 0.075 µA 0.003 µA
Bias Current-Max (IIB) @25C 0.075 µA 0.002 µA
Common-mode Reject Ratio-Min 80 dB
Common-mode Reject Ratio-Nom 96 dB 100 dB
Frequency Compensation NO NO
Input Offset Voltage-Max 2000 µV 3000 µV
JESD-30 Code R-GDIP-T16 R-GDIP-T16
JESD-609 Code e0 e0
Low-Offset NO NO
Neg Supply Voltage Limit-Max -22 V -20 V
Neg Supply Voltage-Nom (Vsup) -20 V -15 V
Number of Functions 2 2
Number of Terminals 16 16
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED
Package Code DIP DIP
Package Equivalence Code DIP16,.3 DIP16,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Qualification Status Not Qualified Not Qualified
Supply Current-Max 2.5 mA 1.2 mA
Supply Voltage Limit-Max 22 V 20 V
Supply Voltage-Nom (Vsup) 20 V 15 V
Surface Mount NO NO
Technology BIPOLAR BIPOLAR
Temperature Grade MILITARY MILITARY
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Voltage Gain-Min 25000 25000
Base Number Matches 2 3
Package Description HERMETIC SEALED, DIP-16
Low-Bias NO
Micropower YES
Power NO
Programmable Power NO
Wideband NO

Compare LH2101AD with alternatives

Compare PM2108Q with alternatives