LH0033G/883
vs
LH0033AJ/883
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NATIONAL SEMICONDUCTOR CORP
NATIONAL SEMICONDUCTOR CORP
Package Description
TO-8, QUAD12,.4SQ
DIP, DIP8,.9
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.33.00.01
8542.33.00.01
Amplifier Type
BUFFER
BUFFER
Average Bias Current-Max (IIB)
0.0025 µA
Bandwidth (3dB)-Nom
200 MHz
100 MHz
Bias Current-Max (IIB) @25C
0.0025 µA
0.0015 µA
Input Offset Voltage-Max
15000 µV
10000 µV
JESD-30 Code
O-MBCY-W12
R-XDIP-T8
JESD-609 Code
e0
e0
Neg Supply Voltage Limit-Max
-20 V
Neg Supply Voltage-Nom (Vsup)
-15 V
-15 V
Number of Functions
1
1
Number of Terminals
12
8
Operating Temperature-Max
125 °C
125 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
METAL
CERAMIC
Package Code
TO-8
DIP
Package Equivalence Code
QUAD12,.4SQ
DIP8,.9
Package Shape
ROUND
RECTANGULAR
Package Style
CYLINDRICAL
IN-LINE
Qualification Status
Not Qualified
Not Qualified
Screening Level
38535Q/M;38534H;883B
38535Q/M;38534H;883B
Slew Rate-Min
2000 V/us
1000 V/us
Slew Rate-Nom
2400 V/us
1500 V/us
Supply Current-Max
22 mA
22 mA
Supply Voltage Limit-Max
20 V
Supply Voltage-Nom (Vsup)
15 V
15 V
Surface Mount
NO
NO
Technology
FET
HYBRID
Temperature Grade
MILITARY
MILITARY
Terminal Finish
Tin/Lead (Sn/Pb)
Tin/Lead (Sn/Pb)
Terminal Form
WIRE
THROUGH-HOLE
Terminal Pitch
2.54 mm
2.54 mm
Terminal Position
BOTTOM
DUAL
Base Number Matches
1
2
Rohs Code
No
Compare LH0033G/883 with alternatives
Compare LH0033AJ/883 with alternatives