LCE16A vs 1N6378 feature comparison

LCE16A MDE Semiconductor Inc

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1N6378 Central Semiconductor Corp

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Rohs Code Yes No
Part Life Cycle Code Active Active
Ihs Manufacturer MDE SEMICONDUCTOR INC CENTRAL SEMICONDUCTOR CORP
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN HIGH RELIABILITY
Breakdown Voltage-Max 19.7 V
Breakdown Voltage-Min 17.8 V 21.2 V
Breakdown Voltage-Nom 18.75 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 26 V 25.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Reference Standard MIL-STD-750
Rep Pk Reverse Voltage-Max 16 V 18 V
Reverse Current-Max 5 µA
Reverse Test Voltage 16 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 20 17
Pbfree Code No
Package Description O-PALF-W2
JESD-609 Code e0
Qualification Status Not Qualified
Terminal Finish TIN LEAD

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