LBSS123LT3G
vs
SJVP0109N9
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
LESHAN RADIO CO LTD
|
SUPERTEX INC
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
CYLINDRICAL, O-MBCY-W3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
90 V
|
| Drain Current-Max (ID) |
0.17 A
|
0.25 A
|
| Drain-source On Resistance-Max |
6 Ω
|
8 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-G3
|
O-MBCY-W3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
METAL
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Polarity/Channel Type |
N-CHANNEL
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
0.225 W
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
WIRE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| HTS Code |
|
8541.29.00.95
|
| Case Connection |
|
DRAIN
|
| Feedback Cap-Max (Crss) |
|
8 pF
|
| JEDEC-95 Code |
|
TO-52
|
| Power Dissipation Ambient-Max |
|
1 W
|
| Qualification Status |
|
Not Qualified
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare LBSS123LT3G with alternatives
Compare SJVP0109N9 with alternatives