LBSS123LT3G
vs
2N7002-T1-E3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
End Of Life
Ihs Manufacturer
LESHAN RADIO CO LTD
VISHAY SILICONIX
Package Description
SMALL OUTLINE, R-PDSO-G3
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
100 V
60 V
Drain Current-Max (ID)
0.17 A
0.115 A
Drain-source On Resistance-Max
6 Ω
7.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
0.225 W
0.2 W
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Pbfree Code
Rohs Code
Part Package Code
SOT-23
Pin Count
3
Additional Feature
LOW THRESHOLD
Feedback Cap-Max (Crss)
5 pF
JEDEC-95 Code
TO-236
JESD-609 Code
e3
Moisture Sensitivity Level
1
Operating Temperature-Min
-55 °C
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Compare LBSS123LT3G with alternatives
Compare 2N7002-T1-E3 with alternatives