L4TVS120A vs SMAJ120AF3 feature comparison

L4TVS120A Suzhou Good-Ark Electronics Co Ltd

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SMAJ120AF3 Taiwan Semiconductor

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer GOOD-ARK ELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PDSO-F2 R-PDSO-C2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 147 V 147 V
Breakdown Voltage-Min 133 V 133 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-F2 R-PDSO-C2
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Rep Pk Reverse Voltage-Max 120 V 120 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form FLAT C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 2
Breakdown Voltage-Nom 140 V
Clamping Voltage-Max 193 V
JEDEC-95 Code DO-214AC
JESD-609 Code e3
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

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