KTC812E
vs
HN1C01FUYTE85N
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
KEC CORP
TOSHIBA CORP
Package Description
SMALL OUTLINE, R-PDSO-F6
SMALL OUTLINE, R-PDSO-G6
Pin Count
6
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Collector Current-Max (IC)
0.15 A
0.15 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SEPARATE, 2 ELEMENTS
SEPARATE, 2 ELEMENTS
DC Current Gain-Min (hFE)
120
120
JESD-30 Code
R-PDSO-F6
R-PDSO-G6
Number of Elements
2
2
Number of Terminals
6
6
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
NPN
NPN
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
FLAT
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
80 MHz
80 MHz
Base Number Matches
1
1
HTS Code
8541.21.00.95
Collector-Base Capacitance-Max
3.5 pF
Operating Temperature-Max
125 °C
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation Ambient-Max
0.2 W
Power Dissipation-Max (Abs)
0.2 W
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
VCEsat-Max
0.25 V
Compare KTC812E with alternatives
Compare HN1C01FUYTE85N with alternatives