KSR1002BU
vs
RN1106FV
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
TOSHIBA CORP
Package Description
CYLINDRICAL, O-PBCY-T3
SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
BUILT-IN BIAS RESISTANCE RATIO IS 10
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
30
30
JEDEC-95 Code
TO-92
JESD-30 Code
O-PBCY-T3
R-PDSO-F3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
RECTANGULAR
Package Style
CYLINDRICAL
SMALL OUTLINE
Polarity/Channel Type
NPN
NPN
Power Dissipation-Max (Abs)
0.3 W
0.15 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
FLAT
Terminal Position
BOTTOM
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
250 MHz
250 MHz
Base Number Matches
1
1
Pin Count
3
Operating Temperature-Max
150 °C
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare KSR1002BU with alternatives
Compare RN1106FV with alternatives