KM681000BLP55
vs
MT5C1008CW-55E/XT
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
MICROSS COMPONENTS
Part Package Code
DIP
DIP
Package Description
DIP,
DIP, DIP32,.6
Pin Count
32
32
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
3A001.A.2.C
HTS Code
8542.32.00.41
8542.32.00.41
Access Time-Max
55 ns
55 ns
JESD-30 Code
R-PDIP-T32
R-CDIP-T32
Length
41.91 mm
40.64 mm
Memory Density
1048576 bit
1048576 bit
Memory IC Type
STANDARD SRAM
STANDARD SRAM
Memory Width
8
8
Number of Functions
1
1
Number of Ports
1
Number of Terminals
32
32
Number of Words
131072 words
131072 words
Number of Words Code
128000
128000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
70 °C
125 °C
Operating Temperature-Min
-55 °C
Organization
128KX8
128KX8
Output Enable
YES
Package Body Material
PLASTIC/EPOXY
CERAMIC, METAL-SEALED COFIRED
Package Code
DIP
DIP
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Seated Height-Max
5.08 mm
4.3434 mm
Standby Voltage-Min
2 V
4.5 V
Supply Voltage-Max (Vsup)
5.5 V
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
MILITARY
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Pitch
2.54 mm
2.54 mm
Terminal Position
DUAL
DUAL
Width
15.24 mm
15.24 mm
Base Number Matches
1
1
Pbfree Code
Rohs Code
Additional Feature
TTL COMPATIBLE INPUTS/OUTPUTS, 2V DATA RETENTION, BATTERY BACKUP, LOW POWER STANDBY
I/O Type
COMMON
JESD-609 Code
e0
Output Characteristics
3-STATE
Package Equivalence Code
DIP32,.6
Screening Level
MIL-STD-883
Standby Current-Max
0.01 A
Supply Current-Max
0.125 mA
Terminal Finish
TIN LEAD
Compare KM681000BLP55 with alternatives
Compare MT5C1008CW-55E/XT with alternatives