KM416S8030BN-FL
vs
V55C2128164VAT7
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
MOSEL-VITELIC
|
| Part Package Code |
TSOP2
|
|
| Package Description |
TSOP, TSSOP54(UNSPEC)
|
,
|
| Pin Count |
54
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.02
|
|
| Access Mode |
FOUR BANK PAGE BURST
|
|
| Access Time-Max |
6 ns
|
|
| Additional Feature |
AUTO/SELF REFRESH
|
|
| Clock Frequency-Max (fCLK) |
100 MHz
|
|
| I/O Type |
COMMON
|
|
| Interleaved Burst Length |
1,2,4,8
|
|
| JESD-30 Code |
R-PDSO-G54
|
|
| JESD-609 Code |
e0
|
|
| Length |
11.2 mm
|
|
| Memory Density |
134217728 bit
|
|
| Memory IC Type |
SYNCHRONOUS DRAM
|
|
| Memory Width |
16
|
|
| Number of Functions |
1
|
|
| Number of Ports |
1
|
|
| Number of Terminals |
54
|
|
| Number of Words |
8388608 words
|
|
| Number of Words Code |
8000000
|
|
| Operating Mode |
SYNCHRONOUS
|
|
| Operating Temperature-Max |
70 °C
|
|
| Operating Temperature-Min |
|
|
| Organization |
8MX16
|
|
| Output Characteristics |
3-STATE
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Code |
TSOP
|
|
| Package Equivalence Code |
TSSOP54(UNSPEC)
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE, THIN PROFILE
|
|
| Qualification Status |
Not Qualified
|
|
| Refresh Cycles |
4096
|
|
| Seated Height-Max |
1.2 mm
|
|
| Self Refresh |
YES
|
|
| Sequential Burst Length |
1,2,4,8,FP
|
|
| Standby Current-Max |
0.001 A
|
|
| Supply Current-Max |
0.21 mA
|
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
|
| Supply Voltage-Min (Vsup) |
3 V
|
|
| Supply Voltage-Nom (Vsup) |
3.3 V
|
|
| Surface Mount |
YES
|
|
| Technology |
CMOS
|
|
| Temperature Grade |
COMMERCIAL
|
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Pitch |
0.4 mm
|
|
| Terminal Position |
DUAL
|
|
| Width |
10.16 mm
|
|
| Base Number Matches |
1
|
2
|
|
|
|
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