KM23V4100D
vs
LH53B4P00D
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
SHARP CORP
|
Part Package Code |
DIP
|
|
Package Description |
DIP, DIP40,.6
|
DIP-40
|
Pin Count |
40
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
|
HTS Code |
8542.32.00.71
|
|
Access Time-Max |
120 ns
|
120 ns
|
Additional Feature |
USER CONFIGURABLE AS 256K X 16; CAN ALSO OPERATE AT 3V TO 3.6V SUPPLY
|
CONFIGURABLE AS 256K X 16
|
Alternate Memory Width |
8
|
|
JESD-30 Code |
R-PDIP-T40
|
R-PDIP-T40
|
JESD-609 Code |
e0
|
|
Length |
52.42 mm
|
52 mm
|
Memory Density |
4194304 bit
|
4194304 bit
|
Memory IC Type |
MASK ROM
|
MASK ROM
|
Memory Width |
8
|
8
|
Number of Functions |
1
|
1
|
Number of Terminals |
40
|
40
|
Number of Words |
524288 words
|
524288 words
|
Number of Words Code |
512000
|
512000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
70 °C
|
|
Operating Temperature-Min |
|
|
Organization |
512KX8
|
512KX8
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
DIP
|
DIP
|
Package Equivalence Code |
DIP40,.6
|
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Seated Height-Max |
5.08 mm
|
5.4 mm
|
Standby Current-Max |
0.00003 A
|
|
Supply Current-Max |
0.025 mA
|
0.1 mA
|
Supply Voltage-Max (Vsup) |
3.3 V
|
5.5 V
|
Supply Voltage-Min (Vsup) |
2.7 V
|
4.5 V
|
Supply Voltage-Nom (Vsup) |
3 V
|
5 V
|
Surface Mount |
NO
|
NO
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
COMMERCIAL
|
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Pitch |
2.54 mm
|
2.54 mm
|
Terminal Position |
DUAL
|
DUAL
|
Width |
15.24 mm
|
15.24 mm
|
Base Number Matches |
1
|
1
|
Output Characteristics |
|
3-STATE
|
|
|
|
Compare KM23V4100D with alternatives
Compare LH53B4P00D with alternatives