KFG1G16U2C-DIB6 vs NAND01GW4B2BZA6E feature comparison

KFG1G16U2C-DIB6 Samsung Semiconductor

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NAND01GW4B2BZA6E Micron Technology Inc

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC MICRON TECHNOLOGY INC
Part Package Code BGA BGA
Package Description VFBGA, TFBGA,
Pin Count 63 63
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 76 ns
Additional Feature BOTTOM BOOT BLOCK
Boot Block BOTTOM
JESD-30 Code R-PBGA-B63 R-PBGA-B63
Length 13 mm 12 mm
Memory Density 1073741824 bit 1073741824 bit
Memory IC Type FLASH FLASH
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 63 63
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Mode SYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 64MX16 64MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code VFBGA TFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL
Programming Voltage 3.3 V 3 V
Qualification Status Not Qualified
Seated Height-Max 1 mm 1.05 mm
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 2.7 V 2.7 V
Supply Voltage-Nom (Vsup) 3.3 V 3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 10 mm 9.5 mm
Base Number Matches 3 1
Pbfree Code Yes
Rohs Code Yes
JESD-609 Code e1
Peak Reflow Temperature (Cel) 260
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Time@Peak Reflow Temperature-Max (s) 30
Type SLC NAND TYPE

Compare KFG1G16U2C-DIB6 with alternatives

Compare NAND01GW4B2BZA6E with alternatives