KFG1G16Q2C-DEB60 vs NAND01GR4A0CZA1T feature comparison

KFG1G16Q2C-DEB60 Samsung Semiconductor

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NAND01GR4A0CZA1T STMicroelectronics

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Rohs Code Yes No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC STMICROELECTRONICS
Part Package Code BGA BGA
Package Description VFBGA, BGA63,10X12,32 BGA,
Pin Count 63 63
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 76 ns 15000 ns
Boot Block BOTTOM
Clock Frequency-Max (fCLK) 66 MHz
Command User Interface YES
Data Polling NO
JESD-30 Code R-PBGA-B63 R-PBGA-B63
Length 13 mm
Memory Density 17179869184 bit 1073741824 bit
Memory IC Type FLASH FLASH
Memory Width 16 16
Moisture Sensitivity Level 3
Number of Functions 1 1
Number of Sectors/Size 1K
Number of Terminals 63 63
Number of Words 1073741824 words 67108864 words
Number of Words Code 1000000000 64000000
Operating Mode SYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min -30 °C
Organization 1GX16 64MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code VFBGA BGA
Package Equivalence Code BGA63,10X12,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY
Page Size 1K words
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) 260
Programming Voltage 1.8 V 1.8 V
Qualification Status Not Qualified Not Qualified
Ready/Busy YES
Seated Height-Max 1 mm
Sector Size 64K
Standby Current-Max 0.00005 A
Supply Current-Max 0.04 mA
Supply Voltage-Max (Vsup) 1.95 V 1.95 V
Supply Voltage-Min (Vsup) 1.7 V 1.65 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER COMMERCIAL
Terminal Form BALL BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM BOTTOM
Toggle Bit NO
Type SLC NAND TYPE
Width 10 mm
Write Cycle Time-Max (tWC) 0.00007 ms
Base Number Matches 1 2
JESD-609 Code e0
Terminal Finish TIN LEAD

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