KBU8K vs GBU8K feature comparison

KBU8K Kuwait Semiconductor Co Ltd

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GBU8K Galaxy Semi-Conductor Co Ltd

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer FORWARD INTERNATIONAL ELECTRONICS LTD GALAXY SEMI-CONDUCTOR CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 800 V 800 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
Non-rep Pk Forward Current-Max 250 A 200 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 8 A 8 A
Rep Pk Reverse Voltage-Max 800 V 800 V
Surface Mount NO NO
Base Number Matches 34 30
Rohs Code Yes
Diode Element Material SILICON
Peak Reflow Temperature (Cel) 260

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