KBU802GT0 vs GBU801 feature comparison

KBU802GT0 Taiwan Semiconductor

Buy Now Datasheet

GBU801 Secos Corporation

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD SECOS CORP
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Breakdown Voltage-Min 100 V
Case Connection ISOLATED
Configuration BRIDGE, 4 ELEMENTS
Diode Element Material SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V
JESD-30 Code R-PSFM-W4
JESD-609 Code e3
Non-rep Pk Forward Current-Max 200 A
Number of Elements 4
Number of Phases 1
Number of Terminals 4
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 8 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 100 V
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form WIRE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10 NOT SPECIFIED
Base Number Matches 1 19

Compare KBU802GT0 with alternatives