KBU802GT0
vs
GBU801
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Contact Manufacturer
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
HY ELECTRONIC CORP
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
Breakdown Voltage-Min
100 V
100 V
Case Connection
ISOLATED
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Element Material
SILICON
SILICON
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
1 V
JESD-30 Code
R-PSFM-W4
JESD-609 Code
e3
Non-rep Pk Forward Current-Max
200 A
200 A
Number of Elements
4
4
Number of Phases
1
1
Number of Terminals
4
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Output Current-Max
8 A
8 A
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
260
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
100 V
100 V
Surface Mount
NO
NO
Terminal Finish
MATTE TIN
Terminal Form
WIRE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
10
Base Number Matches
2
3
Compare KBU802GT0 with alternatives
Compare GBU801 with alternatives