KBPC35005(W)
vs
SB3505GM
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Contact Manufacturer
Obsolete
Ihs Manufacturer
GALAXY SEMI-CONDUCTOR CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
Breakdown Voltage-Min
50 V
50 V
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Element Material
SILICON
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1.1 V
JESD-30 Code
S-PUFM-W4
Non-rep Pk Forward Current-Max
400 A
400 A
Number of Elements
4
4
Number of Phases
1
1
Number of Terminals
4
Operating Temperature-Max
125 °C
150 °C
Operating Temperature-Min
-55 °C
Output Current-Max
35 A
35 A
Package Body Material
PLASTIC/EPOXY
Package Shape
SQUARE
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
260
260
Rep Pk Reverse Voltage-Max
50 V
50 V
Reverse Current-Max
10 µA
Reverse Test Voltage
50 V
Surface Mount
NO
NO
Terminal Form
WIRE
Terminal Position
UPPER
Base Number Matches
2
1
Case Connection
ISOLATED
Moisture Sensitivity Level
1
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Compare SB3505GM with alternatives