KBP153GC2G
vs
HDBL153G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Package Description
R-PSIP-W4
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
Breakdown Voltage-Min
200 V
200 V
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Element Material
SILICON
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1.1 V
JESD-30 Code
R-PSIP-W4
JESD-609 Code
e3
e3
Non-rep Pk Forward Current-Max
50 A
50 A
Number of Elements
4
4
Number of Phases
1
1
Number of Terminals
4
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Output Current-Max
1.5 A
1.5 A
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
200 V
200 V
Surface Mount
NO
NO
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
WIRE
Terminal Position
SINGLE
Base Number Matches
1
1
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
10
Compare KBP153GC2G with alternatives
Compare HDBL153G with alternatives