KBL403GT0 vs KBJ4D feature comparison

KBL403GT0 Taiwan Semiconductor

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KBJ4D Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Breakdown Voltage-Min 200 V 200 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
JESD-30 Code R-PSIP-W4 R-PSFM-T4
JESD-609 Code e3
Non-rep Pk Forward Current-Max 150 A 150 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 4 A 2.4 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Reference Standard UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 200 V 200 V
Surface Mount NO NO
Terminal Finish MATTE TIN
Terminal Form WIRE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 1 15
Package Description R-PSFM-T4
Additional Feature HIGH RELIABILITY
Moisture Sensitivity Level 1
Qualification Status Not Qualified

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