KBJ8K-G vs KBU808 feature comparison

KBJ8K-G Sangdest Microelectronics (Nanjing) Co Ltd

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KBU808 Formosa Microsemi Co Ltd

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Rohs Code Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD FORMOSA MICROSEMI CO LTD
Package Description R-PSFM-T4
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature HIGH RELIABILITY UL RECOGNIZED
Breakdown Voltage-Min 800 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1 V
JESD-30 Code R-PSFM-T4 R-PSFM-W4
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 200 A 200 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Output Current-Max 8 A 8 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 800 V 800 V
Surface Mount NO NO
Terminal Form THROUGH-HOLE WIRE
Terminal Position SINGLE SINGLE
Base Number Matches 2 15
Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C

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