K9F2808U0B-YIB00 vs NAND128W4A2CV6T feature comparison

K9F2808U0B-YIB00 Samsung Semiconductor

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NAND128W4A2CV6T Numonyx Memory Solutions

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC NUMONYX
Part Package Code TSOP1 SOIC
Package Description 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48 VSSOP,
Pin Count 48 48
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 35 ns 35 ns
Additional Feature CONTAINS ADDITIONAL 4M BIT SPARE MEMORY
JESD-30 Code R-PDSO-G48 R-PDSO-G48
Length 18.4 mm 15.4 mm
Memory Density 134217728 bit 134217728 bit
Memory IC Type FLASH FLASH
Memory Width 8 16
Number of Functions 1 1
Number of Terminals 48 48
Number of Words 16777216 words 8388608 words
Number of Words Code 16000000 8000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 16MX8 8MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TSOP1 VSSOP
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
Parallel/Serial PARALLEL PARALLEL
Programming Voltage 2.7 V 3 V
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.2 mm 0.65 mm
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 2.7 V 2.7 V
Supply Voltage-Nom (Vsup) 3.3 V 3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Form GULL WING GULL WING
Terminal Pitch 0.5 mm 0.5 mm
Terminal Position DUAL DUAL
Type SLC NAND TYPE SLC NAND TYPE
Width 12 mm 12 mm
Base Number Matches 1 2
Pbfree Code No
Rohs Code No
Peak Reflow Temperature (Cel) NOT SPECIFIED
Supply Current-Max 0.02 mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Compare NAND128W4A2CV6T with alternatives