K8S5615ETC-FE1D0 vs K8S5715ETC-SE1D0 feature comparison

K8S5615ETC-FE1D0 Samsung Semiconductor

Buy Now Datasheet

K8S5715ETC-SE1D0 Samsung Semiconductor

Buy Now Datasheet
Part Life Cycle Code Active Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA BGA
Package Description VFBGA, VFBGA,
Pin Count 44 44
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 100 ns 100 ns
Additional Feature TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
Boot Block TOP TOP
JESD-30 Code R-PBGA-B44 R-PBGA-B44
Length 7.7 mm
Memory Density 268435456 bit 268435456 bit
Memory IC Type FLASH FLASH
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 44 44
Number of Words 16777216 words 16777216 words
Number of Words Code 16000000 16000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -25 °C -25 °C
Organization 16MX16 16MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code VFBGA VFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL
Programming Voltage 1.8 V 1.8 V
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1 mm 1 mm
Supply Current-Max 0.055 mA 0.055 mA
Supply Voltage-Max (Vsup) 1.95 V 1.95 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Form BALL BALL
Terminal Pitch 0.5 mm 0.5 mm
Terminal Position BOTTOM BOTTOM
Type NOR TYPE NOR TYPE
Width 6.2 mm
Base Number Matches 1 1

Compare K8S5615ETC-FE1D0 with alternatives

Compare K8S5715ETC-SE1D0 with alternatives