K8S5415EZC-DE1D0
vs
K8S5715EZC-SE1C0
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
SAMSUNG SEMICONDUCTOR INC
|
Part Package Code |
BGA
|
BGA
|
Package Description |
VFBGA,
|
VFBGA,
|
Pin Count |
44
|
44
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.51
|
8542.32.00.51
|
Access Time-Max |
100 ns
|
100 ns
|
Additional Feature |
SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
|
SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
|
Boot Block |
BOTTOM/TOP
|
BOTTOM/TOP
|
JESD-30 Code |
R-PBGA-B44
|
R-PBGA-B44
|
Length |
7.7 mm
|
7.7 mm
|
Memory Density |
268435456 bit
|
268435456 bit
|
Memory IC Type |
FLASH
|
FLASH
|
Memory Width |
16
|
16
|
Number of Functions |
1
|
1
|
Number of Terminals |
44
|
44
|
Number of Words |
16777216 words
|
16777216 words
|
Number of Words Code |
16000000
|
16000000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
85 °C
|
85 °C
|
Operating Temperature-Min |
-25 °C
|
-25 °C
|
Organization |
16MX16
|
16MX16
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
VFBGA
|
VFBGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
|
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Programming Voltage |
1.8 V
|
1.8 V
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Seated Height-Max |
1 mm
|
1 mm
|
Supply Current-Max |
0.055 mA
|
0.055 mA
|
Supply Voltage-Max (Vsup) |
1.95 V
|
1.95 V
|
Supply Voltage-Min (Vsup) |
1.7 V
|
1.7 V
|
Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
OTHER
|
OTHER
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
0.5 mm
|
0.5 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Type |
NOR TYPE
|
NOR TYPE
|
Width |
6.2 mm
|
6.2 mm
|
Base Number Matches |
1
|
1
|
|
|
|
Compare K8S5415EZC-DE1D0 with alternatives
Compare K8S5715EZC-SE1C0 with alternatives