K8S2715ETC-FE7E0 vs K8S2615ETC-FC7E0 feature comparison

K8S2715ETC-FE7E0 Samsung Semiconductor

Buy Now Datasheet

K8S2615ETC-FC7E0 Samsung Semiconductor

Buy Now Datasheet
Part Life Cycle Code Active Active
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA BGA
Package Description 7.70 X 6.20 MM, 0.50 MM PITCH, FBGA-44 7.70 X 6.20 MM, 0.50 MM PITCH, LEAD FREE, FBGA-44
Pin Count 44 44
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 70 ns 70 ns
Boot Block TOP TOP
Clock Frequency-Max (fCLK) 108 MHz 108 MHz
Command User Interface NO NO
Common Flash Interface YES YES
Data Polling YES YES
Endurance 100000 Write/Erase Cycles 100000 Write/Erase Cycles
JESD-30 Code R-PBGA-B44 R-PBGA-B44
Memory Density 134217728 bit 134217728 bit
Memory IC Type FLASH FLASH
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 44 44
Number of Words 8388608 words 8388608 words
Number of Words Code 8000000 8000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min -25 °C
Organization 8MX16 8MX16
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code VFBGA VFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL
Programming Voltage 1.8 V 1.8 V
Ready/Busy YES YES
Standby Current-Max 0.00005 A 0.00005 A
Supply Current-Max 0.07 mA 0.07 mA
Supply Voltage-Max (Vsup) 1.95 V 1.95 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER COMMERCIAL
Terminal Form BALL BALL
Terminal Position BOTTOM BOTTOM
Toggle Bit YES YES
Type NOR TYPE NOR TYPE
Write Protection HARDWARE HARDWARE
Base Number Matches 1 1

Compare K8S2715ETC-FE7E0 with alternatives

Compare K8S2615ETC-FC7E0 with alternatives