K8S1315EZC-FE1D0
vs
S29GL01GP13FACR13
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
CYPRESS SEMICONDUCTOR CORP
|
Part Package Code |
BGA
|
|
Package Description |
VFBGA,
|
13 X 11 MM, 1 MM PITCH, FBGA-64
|
Pin Count |
64
|
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.51
|
8542.32.00.51
|
Access Time-Max |
100 ns
|
130 ns
|
Additional Feature |
SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
|
|
Boot Block |
BOTTOM/TOP
|
|
JESD-30 Code |
R-PBGA-B64
|
R-PBGA-B64
|
Memory Density |
536870912 bit
|
1073741824 bit
|
Memory IC Type |
FLASH
|
FLASH
|
Memory Width |
16
|
1
|
Number of Functions |
1
|
1
|
Number of Terminals |
64
|
64
|
Number of Words |
33554432 words
|
1073741824 words
|
Number of Words Code |
32000000
|
1000000000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
85 °C
|
85 °C
|
Operating Temperature-Min |
-25 °C
|
|
Organization |
32MX16
|
1GX1
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
VFBGA
|
LBGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
|
GRID ARRAY, LOW PROFILE
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Programming Voltage |
1.8 V
|
3 V
|
Seated Height-Max |
1 mm
|
1.4 mm
|
Supply Current-Max |
0.07 mA
|
0.11 mA
|
Supply Voltage-Max (Vsup) |
1.95 V
|
3.6 V
|
Supply Voltage-Min (Vsup) |
1.7 V
|
3 V
|
Supply Voltage-Nom (Vsup) |
1.8 V
|
3.3 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
OTHER
|
OTHER
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
0.5 mm
|
1 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Type |
NOR TYPE
|
NOR TYPE
|
Base Number Matches |
1
|
1
|
Rohs Code |
|
No
|
Length |
|
13 mm
|
Qualification Status |
|
Not Qualified
|
Width |
|
11 mm
|
|
|
|
Compare K8S1315EZC-FE1D0 with alternatives
Compare S29GL01GP13FACR13 with alternatives