K8S1315EZC-FE1D0 vs K8S1015EZC-FE1E0 feature comparison

K8S1315EZC-FE1D0 Samsung Semiconductor

Buy Now Datasheet

K8S1015EZC-FE1E0 Samsung Semiconductor

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA BGA
Package Description VFBGA, VFBGA,
Pin Count 64 64
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 100 ns 100 ns
Additional Feature SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
Boot Block BOTTOM/TOP BOTTOM/TOP
JESD-30 Code R-PBGA-B64 R-PBGA-B64
Memory Density 536870912 bit 536870912 bit
Memory IC Type FLASH FLASH
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 64 64
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -25 °C -25 °C
Organization 32MX16 32MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code VFBGA VFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL
Programming Voltage 1.8 V 1.8 V
Seated Height-Max 1 mm 1 mm
Supply Current-Max 0.07 mA 0.07 mA
Supply Voltage-Max (Vsup) 1.95 V 1.95 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Form BALL BALL
Terminal Pitch 0.5 mm 0.5 mm
Terminal Position BOTTOM BOTTOM
Type NOR TYPE NOR TYPE
Base Number Matches 1 1
Qualification Status Not Qualified

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Compare K8S1015EZC-FE1E0 with alternatives