K8S1315EBC-FC1D0
vs
K8S1115EBC-DE1C0
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
SAMSUNG SEMICONDUCTOR INC
|
| Part Package Code |
BGA
|
BGA
|
| Package Description |
VFBGA,
|
VFBGA,
|
| Pin Count |
64
|
64
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| Access Time-Max |
100 ns
|
100 ns
|
| Additional Feature |
BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
|
BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
|
| Boot Block |
BOTTOM
|
BOTTOM
|
| JESD-30 Code |
R-PBGA-B64
|
R-PBGA-B64
|
| Memory Density |
536870912 bit
|
536870912 bit
|
| Memory IC Type |
FLASH
|
FLASH
|
| Memory Width |
16
|
16
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
64
|
64
|
| Number of Words |
33554432 words
|
33554432 words
|
| Number of Words Code |
32000000
|
32000000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
85 °C
|
| Operating Temperature-Min |
|
-25 °C
|
| Organization |
32MX16
|
32MX16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
VFBGA
|
VFBGA
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
|
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Programming Voltage |
1.8 V
|
1.8 V
|
| Seated Height-Max |
1 mm
|
1 mm
|
| Supply Current-Max |
0.07 mA
|
0.07 mA
|
| Supply Voltage-Max (Vsup) |
1.95 V
|
1.95 V
|
| Supply Voltage-Min (Vsup) |
1.7 V
|
1.7 V
|
| Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
OTHER
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
0.5 mm
|
0.5 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Type |
NOR TYPE
|
NOR TYPE
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare K8S1315EBC-FC1D0 with alternatives
Compare K8S1115EBC-DE1C0 with alternatives