K8S1015EZC-DE1DT
vs
K8S1115EZC-FE1ET
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
SAMSUNG SEMICONDUCTOR INC
Package Description
FBGA, BGA64,10X14,20
FBGA, BGA64,10X14,20
Reach Compliance Code
compliant
compliant
ECCN Code
3A991.B.1.B.1
3A991.B.1.B.1
HTS Code
8542.32.00.51
8542.32.00.51
Category CO2 Kg
12
Compliance Temperature Grade
Commercial Extended: -25C to +85C
EU RoHS Version
RoHS 2 (2015/863/EU)
Candidate List Date
2013-06-20
Conflict Mineral Status
DRC Conflict Free
Conflict Mineral Status Source
CMRT V5.10
Access Time-Max
95 ns
95 ns
Command User Interface
YES
YES
Common Flash Interface
YES
YES
Data Polling
YES
YES
JESD-30 Code
R-PBGA-B64
R-PBGA-B64
JESD-609 Code
e3
Memory Density
536870912 bit
536870912 bit
Memory IC Type
EEPROM CARD
EEPROM CARD
Memory Width
16
16
Moisture Sensitivity Level
1
1
Number of Sectors/Size
512
512
Number of Terminals
64
64
Number of Words
33554432 words
33554432 words
Number of Words Code
32000000
32000000
Operating Temperature-Max
85 °C
85 °C
Operating Temperature-Min
-25 °C
-25 °C
Organization
32MX16
32MX16
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
FBGA
FBGA
Package Equivalence Code
BGA64,10X14,20
BGA64,10X14,20
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH
GRID ARRAY, FINE PITCH
Parallel/Serial
PARALLEL
PARALLEL
Programming Voltage
2.7 V
2.7 V
Qualification Status
Not Qualified
Not Qualified
Sector Size
64K
64K
Standby Current-Max
0.00003 A
0.00003 A
Supply Current-Max
0.07 mA
0.07 mA
Supply Voltage-Nom (Vsup)
1.8 V
1.8 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
OTHER
OTHER
Terminal Finish
MATTE TIN
Terminal Form
BALL
BALL
Terminal Pitch
0.5 mm
0.5 mm
Terminal Position
BOTTOM
BOTTOM
Toggle Bit
YES
YES
Type
NOR TYPE
NOR TYPE
Base Number Matches
1
1
Compare K8S1015EZC-DE1DT with alternatives
Compare K8S1115EZC-FE1ET with alternatives