K8F1215EBM-FE1C0
vs
K8F1215EBM-FC1C0
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
SAMSUNG SEMICONDUCTOR INC
Part Package Code
BGA
BGA
Package Description
9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, FBGA-64
9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, FBGA-64
Pin Count
64
64
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.51
8542.32.00.51
Access Time-Max
110 ns
110 ns
Additional Feature
SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE
SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE
Boot Block
BOTTOM
BOTTOM
JESD-30 Code
R-PBGA-B64
R-PBGA-B64
JESD-609 Code
e0
e0
Length
11 mm
11 mm
Memory Density
536870912 bit
536870912 bit
Memory IC Type
FLASH
FLASH
Memory Width
16
16
Number of Functions
1
1
Number of Terminals
64
64
Number of Words
33554432 words
33554432 words
Number of Words Code
32000000
32000000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
85 °C
70 °C
Operating Temperature-Min
-25 °C
Organization
32MX16
32MX16
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
VFBGA
VFBGA
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial
PARALLEL
PARALLEL
Programming Voltage
1.8 V
1.8 V
Qualification Status
Not Qualified
Not Qualified
Seated Height-Max
1 mm
1 mm
Supply Voltage-Max (Vsup)
1.95 V
1.95 V
Supply Voltage-Min (Vsup)
1.7 V
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
1.8 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
OTHER
COMMERCIAL
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
BALL
BALL
Terminal Pitch
0.5 mm
0.5 mm
Terminal Position
BOTTOM
BOTTOM
Type
NOR TYPE
NOR TYPE
Width
9 mm
9 mm
Base Number Matches
1
1
Compare K8F1215EBM-FE1C0 with alternatives
Compare K8F1215EBM-FC1C0 with alternatives