K7R641884M-EC25T vs IS61QDB44M18A-250M3L feature comparison

K7R641884M-EC25T Samsung Semiconductor

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IS61QDB44M18A-250M3L Integrated Silicon Solution Inc

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC INTEGRATED SILICON SOLUTION INC
Package Description BGA, BGA165,11X15,40 LBGA, BGA165,11X15,40
Reach Compliance Code unknown compliant
ECCN Code 3A991.B.2.A 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 0.45 ns 0.45 ns
Clock Frequency-Max (fCLK) 250 MHz 250 MHz
I/O Type SEPARATE SEPARATE
JESD-30 Code R-PBGA-B165 R-PBGA-B165
JESD-609 Code e1
Memory Density 75497472 bit 75497472 bit
Memory IC Type STANDARD SRAM QDR SRAM
Memory Width 18 18
Moisture Sensitivity Level 3
Number of Terminals 165 165
Number of Words 4194304 words 4194304 words
Number of Words Code 4000000 4000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 4MX18 4MX18
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code BGA LBGA
Package Equivalence Code BGA165,11X15,40 BGA165,11X15,40
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Standby Voltage-Min 1.7 V 1.7 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish TIN SILVER COPPER
Terminal Form BALL BALL
Terminal Pitch 1 mm 1 mm
Terminal Position BOTTOM BOTTOM
Base Number Matches 1 1
Part Package Code BGA
Pin Count 165
Additional Feature PIPELINED ARCHITECTURE
Length 17 mm
Number of Functions 1
Seated Height-Max 1.4 mm
Supply Current-Max 0.65 mA
Supply Voltage-Max (Vsup) 1.89 V
Supply Voltage-Min (Vsup) 1.71 V
Supply Voltage-Nom (Vsup) 1.8 V
Width 15 mm

Compare K7R641884M-EC25T with alternatives

Compare IS61QDB44M18A-250M3L with alternatives