K7R163682B-FI250
vs
CY7C1315BV18-200BZC
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
ROCHESTER ELECTRONICS LLC
|
Part Package Code |
BGA
|
BGA
|
Package Description |
LBGA,
|
LBGA,
|
Pin Count |
165
|
165
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
3A991.B.2.A
|
|
HTS Code |
8542.32.00.41
|
|
Access Time-Max |
0.45 ns
|
0.45 ns
|
Additional Feature |
PIPELINED ARCHITECTURE
|
PIPELINED ARCHITECTURE
|
JESD-30 Code |
R-PBGA-B165
|
R-PBGA-B165
|
JESD-609 Code |
e0
|
e0
|
Length |
15 mm
|
15 mm
|
Memory Density |
18874368 bit
|
18874368 bit
|
Memory IC Type |
QDR SRAM
|
QDR SRAM
|
Memory Width |
36
|
36
|
Number of Functions |
1
|
1
|
Number of Terminals |
165
|
165
|
Number of Words |
524288 words
|
524288 words
|
Number of Words Code |
512000
|
512000
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Operating Temperature-Max |
85 °C
|
70 °C
|
Operating Temperature-Min |
-40 °C
|
|
Organization |
512KX36
|
512KX36
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
LBGA
|
LBGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, LOW PROFILE
|
GRID ARRAY, LOW PROFILE
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Qualification Status |
Not Qualified
|
COMMERCIAL
|
Seated Height-Max |
1.4 mm
|
1.4 mm
|
Supply Voltage-Max (Vsup) |
1.9 V
|
1.9 V
|
Supply Voltage-Min (Vsup) |
1.7 V
|
1.7 V
|
Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
|
Temperature Grade |
INDUSTRIAL
|
COMMERCIAL
|
Terminal Finish |
TIN LEAD
|
TIN LEAD
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
1 mm
|
1 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Width |
13 mm
|
13 mm
|
Base Number Matches |
1
|
2
|
Pbfree Code |
|
No
|
Moisture Sensitivity Level |
|
3
|
Peak Reflow Temperature (Cel) |
|
220
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
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