K7J643682M-EI300 vs CY7C1524AV18-300BZXI feature comparison

K7J643682M-EI300 Samsung Semiconductor

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CY7C1524AV18-300BZXI Cypress Semiconductor

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Yes Yes
Obsolete Obsolete
SAMSUNG SEMICONDUCTOR INC CYPRESS SEMICONDUCTOR CORP
BGA BGA
LBGA, BGA165,11X15,40 LBGA, BGA165,11X15,40
165 165
compliant compliant
3A991.B.2.A 3A991.B.2.A
8542.32.00.41 8542.32.00.41
0.45 ns 0.45 ns
PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE
300 MHz 300 MHz
SEPARATE SEPARATE
R-PBGA-B165 R-PBGA-B165
e1 e1
17 mm 17 mm
75497472 bit 75497472 bit
DDR SRAM DDR SRAM
36 36
2 3
1 1
165 165
2097152 words 2097152 words
2000000 2000000
SYNCHRONOUS SYNCHRONOUS
85 °C 85 °C
-40 °C -40 °C
2MX36 2MX36
3-STATE 3-STATE
PLASTIC/EPOXY PLASTIC/EPOXY
LBGA LBGA
BGA165,11X15,40 BGA165,11X15,40
RECTANGULAR RECTANGULAR
GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
PARALLEL PARALLEL
Not Qualified Not Qualified
1.4 mm 1.4 mm
1.7 V 1.7 V
1.9 V 1.9 V
1.7 V 1.7 V
1.8 V 1.8 V
YES YES
CMOS CMOS
INDUSTRIAL INDUSTRIAL
TIN SILVER COPPER Tin/Silver/Copper (Sn/Ag/Cu)
BALL BALL
1 mm 1 mm
BOTTOM BOTTOM
15 mm 15 mm
1 1
Yes
260
1.08 mA
20

Compare K7J643682M-EI300 with alternatives

Compare CY7C1524AV18-300BZXI with alternatives