K6T1008C2E-DL55
vs
BS62LV1027PCG55
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
BRILLIANCE SEMICONDUCTOR INC
Part Package Code
DIP
DIP
Package Description
DIP, DIP32,.6
DIP, DIP32,.6
Pin Count
32
32
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.41
8542.32.00.41
Access Time-Max
55 ns
55 ns
I/O Type
COMMON
COMMON
JESD-30 Code
R-PDIP-T32
R-PDIP-T32
Length
41.91 mm
41.91 mm
Memory Density
1048576 bit
1048576 bit
Memory IC Type
STANDARD SRAM
STANDARD SRAM
Memory Width
8
8
Moisture Sensitivity Level
1
3
Number of Functions
1
1
Number of Terminals
32
32
Number of Words
131072 words
131072 words
Number of Words Code
128000
128000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
70 °C
70 °C
Operating Temperature-Min
Organization
128KX8
128KX8
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
DIP
DIP
Package Equivalence Code
DIP32,.6
DIP32,.6
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Seated Height-Max
5.08 mm
Standby Voltage-Min
2 V
1.5 V
Supply Current-Max
0.05 mA
0.046 mA
Supply Voltage-Max (Vsup)
5.5 V
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
3 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
COMMERCIAL
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Pitch
2.54 mm
2.54 mm
Terminal Position
DUAL
DUAL
Width
15.24 mm
15.24 mm
Base Number Matches
2
1
Pbfree Code
Peak Reflow Temperature (Cel)
260
Standby Current-Max
2e-7 A
Compare K6T1008C2E-DL55 with alternatives
Compare BS62LV1027PCG55 with alternatives