K6T0808C1D-GB550
vs
P4C1256L-55SNC
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
PYRAMID SEMICONDUCTOR CORP
|
| Part Package Code |
SOIC
|
SOIC
|
| Package Description |
SOP,
|
SOP,
|
| Pin Count |
28
|
28
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8542.32.00.41
|
|
| Access Time-Max |
55 ns
|
55 ns
|
| JESD-30 Code |
R-PDSO-G28
|
R-PDSO-G28
|
| Length |
18.29 mm
|
17.9324 mm
|
| Memory Density |
262144 bit
|
262144 bit
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
28
|
28
|
| Number of Words |
32768 words
|
32768 words
|
| Number of Words Code |
32000
|
32000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
32KX8
|
32KX8
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
SOP
|
SOP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
3 mm
|
2.794 mm
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Pitch |
1.27 mm
|
1.27 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
8.38 mm
|
7.5057 mm
|
| Base Number Matches |
1
|
4
|
| Pbfree Code |
|
No
|
| Rohs Code |
|
No
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare K6T0808C1D-GB550 with alternatives
Compare P4C1256L-55SNC with alternatives