K6T0808C1D-DB70000
vs
HM62256BLP-7SL
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
RENESAS TECHNOLOGY CORP
|
| Package Description |
DIP, DIP28,.6
|
DIP,
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
70 ns
|
70 ns
|
| I/O Type |
COMMON
|
|
| JESD-30 Code |
R-PDIP-T28
|
R-PDIP-T28
|
| Length |
36.32 mm
|
|
| Memory Density |
262144 bit
|
262144 bit
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
28
|
28
|
| Number of Words |
32768 words
|
32768 words
|
| Number of Words Code |
32000
|
32000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
32KX8
|
32KX8
|
| Output Characteristics |
3-STATE
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
DIP
|
DIP
|
| Package Equivalence Code |
DIP28,.6
|
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
|
| Seated Height-Max |
5.08 mm
|
|
| Standby Voltage-Min |
2 V
|
|
| Supply Current-Max |
0.06 mA
|
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
15.24 mm
|
|
| Base Number Matches |
1
|
2
|
|
|
|
Compare K6T0808C1D-DB70000 with alternatives