K6F8016R6M-FF70 vs M24L816512DA-55BIG feature comparison

K6F8016R6M-FF70 Samsung Semiconductor

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M24L816512DA-55BIG Elite Semiconductor Memory Technology Inc

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Rohs Code No
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
Part Package Code BGA DSBGA
Package Description TFBGA, BGA48,6X8,30 TFBGA,
Pin Count 48 48
Reach Compliance Code unknown unknown
ECCN Code 3A991.B.2.A 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 70 ns 55 ns
I/O Type COMMON
JESD-30 Code R-PBGA-B48 R-PBGA-B48
JESD-609 Code e0
Length 12 mm 8 mm
Memory Density 8388608 bit 8388608 bit
Memory IC Type STANDARD SRAM PSEUDO STATIC RAM
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 48 48
Number of Words 524288 words 524288 words
Number of Words Code 512000 512000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 512KX16 512KX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TFBGA
Package Equivalence Code BGA48,6X8,30
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.2 mm 1.2 mm
Standby Voltage-Min 1 V
Supply Current-Max 0.025 mA
Supply Voltage-Max (Vsup) 2.2 V 3.6 V
Supply Voltage-Min (Vsup) 1.65 V 2.7 V
Supply Voltage-Nom (Vsup) 2 V 3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Finish TIN LEAD
Terminal Form BALL BALL
Terminal Pitch 0.75 mm 0.75 mm
Terminal Position BOTTOM BOTTOM
Width 8 mm 6 mm
Base Number Matches 1 1

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