K6F8008R2M-FF850
vs
IS61LV10008-10MI
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
INTEGRATED SILICON SOLUTION INC
|
| Part Package Code |
BGA
|
BGA
|
| Package Description |
TFBGA,
|
9 X 11 MM, MINI, BGA-48
|
| Pin Count |
48
|
48
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
3A991.B.2.A
|
3A991.B.2.A
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
85 ns
|
10 ns
|
| JESD-30 Code |
R-PBGA-B48
|
R-PBGA-B48
|
| Length |
12 mm
|
11 mm
|
| Memory Density |
8388608 bit
|
8388608 bit
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
48
|
48
|
| Number of Words |
1048576 words
|
1048576 words
|
| Number of Words Code |
1000000
|
1000000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Organization |
1MX8
|
1MX8
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TFBGA
|
TFBGA
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, THIN PROFILE, FINE PITCH
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
1.2 mm
|
1.2 mm
|
| Supply Voltage-Max (Vsup) |
2.2 V
|
3.63 V
|
| Supply Voltage-Min (Vsup) |
1.65 V
|
3.135 V
|
| Supply Voltage-Nom (Vsup) |
1.8 V
|
3.3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
0.75 mm
|
0.75 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Width |
8 mm
|
9 mm
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
No
|
| JESD-609 Code |
|
e0
|
| Moisture Sensitivity Level |
|
3
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare K6F8008R2M-FF850 with alternatives
Compare IS61LV10008-10MI with alternatives