K6F4016S6D-FF85 vs K6F4016R6E-EF850 feature comparison

K6F4016S6D-FF85 Samsung Semiconductor

Buy Now Datasheet

K6F4016R6E-EF850 Samsung Semiconductor

Buy Now Datasheet
Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA BGA
Package Description TFBGA, BGA48,6X8,30 VFBGA,
Pin Count 48 48
Reach Compliance Code compliant unknown
ECCN Code 3A991.B.2.A 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 85 ns 85 ns
I/O Type COMMON
JESD-30 Code R-PBGA-B48 R-PBGA-B48
JESD-609 Code e0
Length 8.5 mm 7 mm
Memory Density 4194304 bit 4194304 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 48 48
Number of Words 262144 words 262144 words
Number of Words Code 256000 256000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 256KX16 256KX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA VFBGA
Package Equivalence Code BGA48,6X8,30
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.2 mm 1 mm
Standby Current-Max 0.000003 A
Standby Voltage-Min 1.5 V
Supply Current-Max 0.025 mA
Supply Voltage-Max (Vsup) 2.7 V 2.2 V
Supply Voltage-Min (Vsup) 2.3 V 1.65 V
Supply Voltage-Nom (Vsup) 2.5 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Finish TIN LEAD
Terminal Form BALL BALL
Terminal Pitch 0.75 mm 0.75 mm
Terminal Position BOTTOM BOTTOM
Width 6.1 mm 6 mm
Base Number Matches 1 1

Compare K6F4016S6D-FF85 with alternatives

Compare K6F4016R6E-EF850 with alternatives