K6F4016R6E-EF850
vs
HY62EF8400ASLM-12I
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
SK HYNIX INC
|
| Part Package Code |
BGA
|
BGA
|
| Package Description |
VFBGA,
|
VFBGA,
|
| Pin Count |
48
|
48
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
3A991.B.2.A
|
3A991.B.2.A
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
85 ns
|
120 ns
|
| JESD-30 Code |
R-PBGA-B48
|
R-PBGA-B48
|
| Length |
7 mm
|
8.4 mm
|
| Memory Density |
4194304 bit
|
4194304 bit
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Memory Width |
16
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
48
|
48
|
| Number of Words |
262144 words
|
524288 words
|
| Number of Words Code |
256000
|
512000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Organization |
256KX16
|
512KX8
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
VFBGA
|
VFBGA
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
|
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
1 mm
|
0.95 mm
|
| Supply Voltage-Max (Vsup) |
2.2 V
|
2.2 V
|
| Supply Voltage-Min (Vsup) |
1.65 V
|
1.8 V
|
| Supply Voltage-Nom (Vsup) |
1.8 V
|
2 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
0.75 mm
|
0.75 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Width |
6 mm
|
7.4 mm
|
| Base Number Matches |
1
|
1
|
| JESD-609 Code |
|
e1
|
| Terminal Finish |
|
TIN SILVER COPPER
|
|
|
|
Compare K6F4016R6E-EF850 with alternatives
Compare HY62EF8400ASLM-12I with alternatives