K6F1616U6M-EF70
vs
MB82D01161-90PBN
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
FUJITSU SEMICONDUCTOR AMERICA INC
|
Part Package Code |
BGA
|
BGA
|
Package Description |
VFBGA,
|
TFBGA,
|
Pin Count |
48
|
48
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
3A991.B.2.A
|
3A991.B.2.A
|
HTS Code |
8542.32.00.41
|
8542.32.00.41
|
Access Time-Max |
70 ns
|
90 ns
|
JESD-30 Code |
R-PBGA-B48
|
R-PBGA-B48
|
Length |
12 mm
|
9 mm
|
Memory Density |
16777216 bit
|
16777216 bit
|
Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
Memory Width |
16
|
16
|
Number of Functions |
1
|
1
|
Number of Terminals |
48
|
48
|
Number of Words |
1048576 words
|
1048576 words
|
Number of Words Code |
1000000
|
1000000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
85 °C
|
85 °C
|
Operating Temperature-Min |
-40 °C
|
-30 °C
|
Organization |
1MX16
|
1MX16
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
VFBGA
|
TFBGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Seated Height-Max |
1 mm
|
1.2 mm
|
Supply Voltage-Max (Vsup) |
3.3 V
|
2.7 V
|
Supply Voltage-Min (Vsup) |
2.7 V
|
2.3 V
|
Supply Voltage-Nom (Vsup) |
3 V
|
2.5 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
INDUSTRIAL
|
OTHER
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
0.75 mm
|
0.75 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Width |
9 mm
|
6 mm
|
Base Number Matches |
1
|
2
|
|
|
|
Compare K6F1616U6M-EF70 with alternatives
Compare MB82D01161-90PBN with alternatives